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Degradation of device characteristics due to hot carriers also occurs in bipolar transistors. This is a well-known phenomenon characterized by a reduced hFE when a reverse bias is applied across the emitter-base. With the appearance of advanced shallow junction devices in recent years, there is a tendency towards increased reverse leakage current between the emitter and base and therefore a tendency towards greater degradation of characteristics due to hot carriers.

или Безналоговые Девицы в "Reliability Handbook UG-311":

A major reliability issue for high-performance bipolar transistors is the reduction of forward current gain (hfe) resulting from hot carrier (HC) generation during reverse bias operation of the emitter-base pn junction [70]. Bipolar HC-induced degradation is strongly dependent on device size. The overall objective is to develop reliability-driven rules that can be used to reduce HC degradation and improve transistor reliability.

Можно сказать, что всё было про СВЧ транзисторы... Но N. TOUFIK, F. PILANCHON and P. MIALHE в "Degradation of junction parametes of an electrically stressed NPN bipolar transistor" - значимо убили дубовый 2N2222. Пусть и током в 60 мА.