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Vit (Сегодня, 13:37, просмотров: 20) ответил Toчкa oпopы на Что-то я не припоминаю возможность дозаписи [страницы] в ИМС ревизии D... Да и в документации не нахожу. С NAND'ами нет путаницы?
Запись буфера в страницу основной памяти. В ревизии B уже были плохие слова. В ревизии D добавили, что страницы стёрты командами. Запамятовал 

7.3 Buffer to Main Memory Page Program without Built-in Erase

A previously-erased page within main memory can be programmed with the contents of either

buffer 1 or buffer 2. A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2, must be clocked into

the device. For the standard DataFlash page size (528 bytes), the opcode must be followed by

three address bytes consist of 2 don’t care bits, 12 page address bits (PA11 - PA0) that specify

the page in the main memory to be written and 10 don’t care bits. To perform a buffer to main

memory page program without built-in erase for the binary page size (512 bytes), the opcode

88H for buffer 1 or 89H for buffer 2, must be clocked into the device followed by three address

bytes consisting of 3 don’t care bits, 12 page address bits (A20 - A9) that specify the page in the

main memory to be written and 9 don’t care bits. When a low-to-high transition occurs on the CS

pin, the part will program the data stored in the buffer into the specified page in the main memory.

It is necessary that the page in main memory that is being programmed has been previously

erased using one of the erase commands (Page Erase or Block Erase). The programming of the

page is internally self-timed and should take place in a maximum time of tP. During this time, the

status register and the RDY/BUSY pin will indicate that the part is busy


В ревизии B дисклеймер был такой

Successive page programming operations without doing a page erase are not recommended.

In other words, changing bytes within a pages from a "1" to a "0" during multiple page

AT45DB161D.pdfprogramming operations without erasing that page is not recommendedAT45DB161B.pdf