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24 апреля
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USSR (02.06.2015 10:00, просмотров: 1) ответил POV на Не оно
Точно не оно? "Parasitic bipolar transistors, which are present in the fundamental structure of CMOS devices, can create paths in the device for destructive currents. Catastrophic failure can occur if these parasitic structures begin to conduct, because the effect is regenerative and reinforces itself until potentially destructive currents are produced. The two parasitic transistors combine to form a silicon-controlled rectifier (SCR). The latch-up effect occurs when the SCR is turned on, resulting in high current flow through the CMOS device. The SCR can be turned on by transients occurring on the gates of the CMOS device or on the output of the CMOS device. Because I/O pins are connected to the input and output buffers, latch-up can occur on either buffer." www.altera.com/content/dam/altera-www/global/en_US/pdfs/literature/ds/dsoprq.pdf